机译:台面侧壁涂有SiO_2 / TiO_2分布布拉格反射器的GaN基倒装芯片发光二极管的光输出增强
Optoelectronics Laboratory, Korea Electronics Technology Institute, Seongnam 463-816, Republic of Korea;
Photo-Electronics Device Group, Samsung Advanced Institute of Technology, Yongin 449-712, Republic of Korea;
rnPhoto-Electronics Device Group, Samsung Advanced Institute of Technology, Yongin 449-712, Republic of Korea;
rnLED Laboratory, Corporate R&D Institute, Samsung LED, Suwon 443-743, Republic of Korea;
LED Laboratory, Corporate R&D Institute, Samsung LED, Suwon 443-743, Republic of Korea;
LED Laboratory, Corporate R&D Institute, Samsung LED, Suwon 443-743, Republic of Korea;
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;
机译:GaN基倒装芯片发光二极管中作为p型电极的ITO / SiO_2 / TiO_2分布式布拉格反射器的设计
机译:具有TiO_2 / SiO_2反射镜和粗糙的GaO_x表面膜的垂直结构的GaN基发光二极管的增强的光输出
机译:通过铝镜和原子层沉积提高基于GaN的发光二极管的性能-具有图案化蓝宝石衬底的TiO_2 / Al_2O3分布式布拉格反射器背面反射器
机译:具有分布式布拉格反射器和金属镜的混合反射器的高反射率,用于倒装芯片紫外线发光二极管
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:分布式布拉格反射器对GaN基倒装芯片发光二极管电学和光学性能的影响
机译:采用嵌入式分布式布拉格反射器的紫外发光二极管的光输出增强