A non volatile memory device and a program method thereof are provided to electrically separate word lines of a main cell region and a spare cell region, thereby independently applying a program voltage to a separated word line of each area. A non volatile memory device(NVRAM) includes a main cell region(MCR) and a spare cell region(SCR). A selecting unit(101) is located among word lines(WL0~WLn) of each region. The selecting unit electrically separates word lines of each region. The selecting unit selectively drives the word lines of each region. The selecting unit selects the main cell region or the spare cell region in response to the output of a controller(102). The main cell region comprises a plurality of memory cells which stores data. The main cell region includes cell blocks(B0~Bn) including a plurality of memory cells. The spare cell region includes cell blocks corresponding to the cell blocks in the main cell region. The selecting unit includes the first selecting unit(101A) connected to a word line of the main cell region and the second selecting unit(101B) connected to a word line of the spare cell region.
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