Laminated structure of group III nitride semiconductor, method of manufacturing the same, and group III nitride semiconductor device

摘要

PROBLEM TO BE SOLVED: To provide a laminating structure of a 3-group nitride semiconductor capable of realizing a flat surface, a controlled film thickness and the reduction of crystal defect by a one time crystal growing process with excellent reproducibility, and provide a manufacturing method thereof and a 3-group nitride semiconductor device.;SOLUTION: The laminating structure of a 3-group nitride semiconductor which consists of a single crystal substrate (a supphire substrate 11), a 3-group nitride buffer layer 12 formed on the main surface of the substrate, a first 3-group nitride layer (an undope GaN layer 13) formed on the buffer layer, a graded low temperature deposit layer 14 formed on the nitride layer and consisting of a nitride which is produced by changing a 3-group element composition continuously, and a second 3-group nitride layer (another undope GaN layer 15) formed on the deposit layer, is formed.;COPYRIGHT: (C)2005,JPO&NCIPI