P-type dopant by using the p-type semi-polar III nitride semiconductor is doped during growth, a method of manufacturing the III-nitride device or III nitride semiconductor, a semi-polar III nitride semiconductors, and, p-type III a method of manufacturing a nitride semiconductor

摘要

(Al, In, Ga and B) control method of the p type conductivity in N semiconductor crystallizing is disclosed. For example, 011 was failed was cut to direction {100} evaporated {1011} the GaN membrane is included on the MgAl₂ O₄ spinel baseplate. It contains the Mg atom intend in the semipolar nitriding thin film which grows, it is possible to bring p type conductivity by introducing active electronic state into the band structure of semiconductor crystal. Zn which brings the similar connotation of ideal electronic state or it is possible to use C and the like other impurity atoms.