METHOD FOR MANUFACTURING P-TYPE GROUP III NITRIDE SEMICONDUCTOR, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

An object of the present invention is to provide an efficient method for manufacturing a p-type group III nitride semiconductor that has adequate carrier concentration and a surface with a low occurrence of crystal damage. The inventive method for manufacturing a p-type group III nitride semiconductor comprises: (a) growing a group III nitride semiconductor containing a p-type dopant at 1000(C or higher in an atmosphere containing H2 gas and/or NH3 gas; and (b) after the growth of the group III nitride semiconductor, substituting the H2 gas and NH3 gas with an inert gas at a temperature higher than 800(C while reducing the temperature.