首页> 外国专利> HIGH FREQUENCY PLASMA CVD APPARATUS, HIGH FREQUENCY PLASMA CVD METHOD AND SEMICONDUCTOR THIN FILM MANUFACTURING METHOD

HIGH FREQUENCY PLASMA CVD APPARATUS, HIGH FREQUENCY PLASMA CVD METHOD AND SEMICONDUCTOR THIN FILM MANUFACTURING METHOD

机译:高频等离子体CVD设备,高频等离子体CVD方法和半导体薄膜制造方法

摘要

Provided are large area and uniform VHF plasma CVD apparatus and method wherein a plasma generating source constitutes the VHF plasma CVD apparatus for manufacturing a tandem-type thin film silicon solar cell, and influences of standing waves, generation of harmful plasma other than between a pair of electrodes and supply power consumption other than between the pair of electrodes are suppressed. First and second power feed points are arranged on an electrode at positions facing each other. A distance between the power feed points is set at an integral multiple of a half of the wavelength of the using power, and a pulse power separated in terms of time is supplied. The pulse power is outputted from two phase-variable double output high frequency power supplies which can perform pulse modulation. Thus, a first standing wave wherein the anti-node position matches with positions of the first and the second power feed points, and a second standing wave wherein the node position matches with positions of the first and the second power feed points are alternately generated in terms of time.
机译:提供一种大面积且均匀的VHF等离子体CVD装置和方法,其中等离子体产生源构成用于制造串联型薄膜硅太阳能电池的VHF等离子体CVD装置,并且驻波的影响,除了一对之间的有害等离子体的产生。抑制了一对电极之间的接触,并且抑制了除一对电极之间的电极以外的电源消耗功率。第一馈电点和第二馈电点布置在电极上彼此面对的位置。馈电点之间的距离设置为使用功率的波长的一半的整数倍,并且提供根据时间分离的脉冲功率。脉冲功率是从两个可以执行脉冲调制的相位可变双输出高频电源输出的。因此,在其中交替地产生其中波腹位置与第一和第二馈电点的位置匹配的第一驻波,以及节点位置与第一和第二馈电点的位置匹配的第二驻波。时间条款。

著录项

  • 公开/公告号US2010239757A1

    专利类型

  • 公开/公告日2010-09-23

    原文格式PDF

  • 申请/专利权人 MASAYOSHI MURATA;

    申请/专利号US20080734163

  • 发明设计人 MASAYOSHI MURATA;

    申请日2008-09-08

  • 分类号C23C16/00;

  • 国家 US

  • 入库时间 2022-08-21 18:54:55

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