Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50kHz/33MHz dual-frequency atmospheric-pressure plasma jet

Jiaojiao LI; Qianghua YUAN; Xiaowei CHANG; Yona WANG; Guiqin YIN; Chenzhong DONG

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Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50kHz/33MHz dual-frequency atmospheric-pressure plasma jet

机译：用50kHz / 33MHz双频大气压等离子体射流从六甲基二硅氧烷（HMDSO）沉积有机硅薄膜

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The deposition of organosilicone thin films from hexamethyldisiloxane(HMDSO) by using a dual-frequency (50 kHz/33 MHz) atmospheric-pressure micro-plasma jet with an admixture of a small volume of HMDSO and Ar was investigated.The topography was measured by using scanning electron microscopy.The chemical bond and composition of these films were analyzed by Fourier transform infrared spectroscopy (FTIR) and x-ray photoelectron spectroscopy.The results indicated that the as-deposited film was constituted by silicon,carbon,and oxygen elements,and FTIR suggested the films are organosilicon with the organic component (-CHx) and hydroxyl functional group(-OH) connected to the Si-O-Si backbone.Thin-film hardness was recorded by an MH-5-VM Digital Micro-Hardness Tester.Radio frequency power had a strong impact on film hardness and the hardness increased with increasing power.

机译：研究了使用双频（50 kHz / 33 MHz）常压微等离子体射流与少量HMDSO和Ar的混合物从六甲基二硅氧烷（HMDSO）沉积有机硅薄膜的方法。用傅立叶变换红外光谱（FTIR）和X射线光电子能谱分析了这些薄膜的化学键和组成。结果表明，沉积后的薄膜由硅，碳和氧元素组成， FTIR薄膜是有机硅，有机成分（-CHx）和羟基官能团（-OH）连接到Si-O-Si主链上。通过MH-5-VM Digital Micro-Hardness记录薄膜的硬度测试仪。射频功率对漆膜硬度有很大影响，并且硬度随功率的增加而增加。

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《等离子体科学和技术（英文版）》 |2017年第4期|92-98|共7页
作者
Jiaojiao LI; Qianghua YUAN; Xiaowei CHANG; Yona WANG; Guiqin YIN; Chenzhong DONG;
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Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, 730070, People's Republic of China;

Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, 730070, People's Republic of China;

Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, 730070, People's Republic of China;

Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, 730070, People's Republic of China;

Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, 730070, People's Republic of China;

Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, 730070, People's Republic of China;

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Deposition of organosilicone thin film from hexamethyldisiloxane (HMDSO) with 50kHz/33MHz dual-frequency atmospheric-pressure plasma jet

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