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Capacitorless one-transistor semiconductor memory device having improved data retention abilities and operation characteristics
Capacitorless one-transistor semiconductor memory device having improved data retention abilities and operation characteristics
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机译:具有改善的数据保持能力和操作特性的无电容器单晶体管半导体存储器件
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摘要
A capacitorless one transistor (1T) semiconductor device whose data storage abilities are increased and leakage current is reduced is provided. The capacitor-less 1T semiconductor device includes a buried insulating layer formed on a substrate, an active region formed on the buried insulating layer and including a source region, a drain region and a floating body formed between the source region and the drain region, and a gate pattern formed on the floating body, wherein the floating body includes a main floating body having the same top surface height as one of the source region and the drain region, and a first upper floating body formed between the main floating body and the gate pattern.
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