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Method of improving data retention ability of semiconductor memory device, and semiconductor memory device
Method of improving data retention ability of semiconductor memory device, and semiconductor memory device
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机译:改善半导体存储器件的数据保持能力的方法和半导体存储器件
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摘要
This invention is a method of improving a data retention ability of a semiconductor memory device having a plurality of nonvolatile memory cells storing a plurality of memory states. The method includes the steps of: (a) selecting the nonvolatile memory cells in a first memory group each of which accumulates charges higher in level than a first threshold from the plurality of nonvolatile memory cells; (b) extracting the nonvolatile memory cells in a first sub-group each of which accumulates the charges lower in level than a second threshold from the nonvolatile memory cells in the first memory group; and (c) programming the nonvolatile memory cells in the first sub-group until each of the nonvolatile memory cells accumulates the charges higher in level than the second threshold.
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