A CAPACITOR-LESS ONE TRANSISTOR SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED DATA RETENTION ABILITIES AND OPERATION CHARACTERISTICS

摘要

PURPOSE: A capacitor-less 1T semiconductor memory device is provided to improve data sensing margin by enhancing data retention and storage performance. CONSTITUTION: A bottom insulation layer(130) is formed on a substrate(110). An active region is formed on the bottom insulation layer and includes a source region(140), a drain region(160), and a floating body(150) between the source region and the drain region. A gate pattern is formed on the floating body. The floating body includes a main floating body and a first upper floating body. The main floating body has the same height as one of the source region and the drain region. The gate pattern includes a gate insulation layer(180) and a gate electrode(170) formed on the first upper floating body.