METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR-LESS ONE-TRANSISTOR MEMORY CELL, CAPABLE OF IMPROVING AN INFORMATION RETENTION PERFORMANCE

摘要

PURPOSE: A method for fabricating a semiconductor device including a capacitor-less one-transistor memory cell is provided to increase a volume to store electric charges by forming the protruded part of a cell floating body pattern to be wider that a cell gate pattern.;CONSTITUTION: A first floating body pattern(6a) is formed on the lower insulating film(3) of a substrate(1). A first gate pattern(33a) is formed to cover the sidewall of the first floating body pattern. A part of the first floating body pattern which is adjacent to the first gate pattern is etched. The first floating body pattern has a protruded part(7). A first dopant region is formed in the etched region of the first floating body pattern.;COPYRIGHT KIPO 2010