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Nonvolatile semiconductor memory device capable of improving retention/disturb characteristics of memory cells and method of operating the same
Nonvolatile semiconductor memory device capable of improving retention/disturb characteristics of memory cells and method of operating the same
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机译:能够改善存储单元的保持/干扰特性的非易失性半导体存储器件及其操作方法
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摘要
A semiconductor memory device includes a memory cell array configured to store data; peripheral circuits configured to perform program verifying operation, read operation, and erase verifying operation on the memory cell array; and a control circuit configured to control the peripheral circuits, wherein the control circuit is configured to control the peripheral circuits to set a bit line voltage in the program verifying operation to have a higher level than a bit line voltage in the read operation, and a bit line voltage in the erase verifying operation to have a lower level than the bit line voltage in the read operation.
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