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Nonvolatile semiconductor memory device capable of improving retention/disturb characteristics of memory cells and method of operating the same

机译:能够改善存储单元的保持/干扰特性的非易失性半导体存储器件及其操作方法

摘要

A semiconductor memory device includes a memory cell array configured to store data; peripheral circuits configured to perform program verifying operation, read operation, and erase verifying operation on the memory cell array; and a control circuit configured to control the peripheral circuits, wherein the control circuit is configured to control the peripheral circuits to set a bit line voltage in the program verifying operation to have a higher level than a bit line voltage in the read operation, and a bit line voltage in the erase verifying operation to have a lower level than the bit line voltage in the read operation.
机译:半导体存储器件包括:存储单元阵列,被配置为存储数据;以及外围电路,被配置为对存储单元阵列执行编程验证操作,读取操作和擦除验证操作;控制电路,其被配置为控制外围电路,其中,控制电路被配置为控制外围电路以将编程验证操作中的位线电压设置为比读取操作中的位线电压高的电平,以及擦除验证操作中的位线电压具有比读取操作中的位线电压低的电平。

著录项

  • 公开/公告号US9218887B2

    专利类型

  • 公开/公告日2015-12-22

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号US201414186665

  • 发明设计人 SUNG WOOK JUNG;

    申请日2014-02-21

  • 分类号G11C16/24;G11C16/34;G11C16/04;

  • 国家 US

  • 入库时间 2022-08-21 14:29:23

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