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Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma
Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma
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机译:半导体器件的制造方法,包括通过高密度等离子体形成氮化物/氧化物的步骤
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摘要
In order to manufacture a highly reliable and compact TFT, it is an object of the present invention to provide a method for manufacturing a semiconductor device for forming a gate electrode, a source wiring and a drain wiring with high reliability, and a semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film is formed over a substrate having an insulated surface, a gate insulating film is formed over the semiconductor film, a gate electrode is formed over the gate insulating film, and a nitride film is formed over the surface of the gate electrode by nitriding the surface of the gate electrode by using high-density plasma.
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