Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron-Nitride for p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Memory Devices

摘要

We investigated the effect of boron at the interface of the diffusion barrier in tungsten polymetal gate stacks on the gate contact interfacial resistance between tungsten and p+ polycrystalline silicon (poly-Si). B-N formation can occur at the bottom of