Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor's

In-Shik Han; Hee-Hwan Ji; Tae-Gyu Goo; Ook-Sang Yoo; Won-Ho Choi; Min-Ki Na; Yong-Goo Kim; Sung-Hyung Park; Heui-Seung Lee; Young-Seok Kang; Dae-Byung Kim; Hi-Deok Lee

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Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor's

机译：纳米级p沟道金属氧化物半导体场效应晶体管的等离子氮化氧化物的器件性能和负偏压温度不稳定性的研究

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In this paper, we investigated the device performance and negative bias temperature instability (NBTI) degradation for thermally nitrided oxide (TNO) and plasma nitrided oxide (PNO) in nanoscale p-channel metal oxide semiconductor field effect transistor

机译：在本文中，我们研究了纳米级p沟道金属氧化物半导体场效应晶体管中热氮化物（TNO）和等离子体氮化物（PNO）的器件性能和负偏压温度不稳定性（NBTI）退化。

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《Japanese journal of applied physics》 |2008年第4issue2期|2628-2632|共5页
作者
In-Shik Han; Hee-Hwan Ji; Tae-Gyu Goo; Ook-Sang Yoo; Won-Ho Choi; Min-Ki Na; Yong-Goo Kim; Sung-Hyung Park; Heui-Seung Lee; Young-Seok Kang; Dae-Byung Kim; Hi-Deok Lee;
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plasma nitrided oxide (PNO); negative bias temperature instability (NBTI); recovery effect; interface trap charge; positive oxide charge;

机译：等离子体氮化氧化物（PNO）;负偏压温度不稳定性（NBTI）;恢复效果;界面陷阱电荷;正氧化物电荷;

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1. Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics [J] . Shiyang Zhu, Anri Nakajima, Takuo Ohashi, Journal of Applied Physics . 2005,第11期

机译：具有超薄等离子氮化SiON栅极电介质的p沟道金属氧化物半导体场效应晶体管在负偏置温度不稳定性下的界面陷阱和氧化物电荷产生
2. Effect of Nitrogen Concentration on Low-Frequency Noise and Negative Bias Temperature Instability of p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Nitrided Gate Oxide [J] . In-Shik Han, Hyuk-Min Kwon, Jung-Deuk Bok, Japanese journal of applied physics . 2011,第10Issue2期

机译：氮浓度对带有氮化栅氧化物的p沟道金属氧化物半导体场效应晶体管的低频噪声和负偏置温度不稳定性的影响
3. Device Characteristics and Aggravated Negative Bias Temperature Instability in p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Uniaxial Compressive Strain [J] . Chia-Yu Lu, Homg-Chih Lin, Yi-Feng Chang, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：具有单轴压缩应变的p沟道金属氧化物半导体场效应晶体管的器件特性和负负偏置温度不稳定性
4. Effect of strain on Negative Bias Temperature Instability of Germanium p-channel Field-Effect Transistor with high-к gate dielectric [C] . Bin Liu, Lim P.S.Y., Yee-Chia Yeo 2010 IEEE International Reliability Physics Symposium . 2010

机译：应变对高k栅介电常数锗p沟道场效应晶体管负偏置温度不稳定性的影响
5. Atomic-scale defects involved in the negative bias temperature instability in silicon dioxide and plasma-nitrided oxide based pMOSFETs. [D] . Campbell, Jason P. 2007

机译：二氧化硅和基于等离子体氮化的氧化物的pMOSFET的负偏置温度不稳定性所涉及的原子尺度缺陷。
6. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques [O] . Hsin-Ying Lee, Hung-Lin Huang, Chun-Yen Tseng 2014

机译：使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
7. Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics [O] . Shiyang Zhu, Anri Nakajima, Takuo Ohashi, 2005

机译：具有超薄等离子体 - 氮化SiON电介质的P沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性下的界面阱和氧化物电荷产生

Investigation of Device Performance and Negative Bias Temperature Instability of Plasma Nitrided Oxide in Nanoscale p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor's

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