MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE CAPABLE OF SECURING A BOTTOM LINE WIDTH NECESSARY FOR AN OPEN AREA

摘要

PURPOSE: A manufacturing method of a semiconductor device capable of securing a bottom line width necessary for an open area is provided to secure bottom line width in the semiconductor device by forming an etch stopping layer equipping a first pattern.;CONSTITUTION: A manufacturing method of a semiconductor device capable of securing a bottom line width necessary for an open area is as follows. An etching stopping layer(54) equipping a first pattern extending an upper side of the insulating layer is formed on an insulating layer. The insulating layer is formed on the etching stopping layer. The second pattern exposes the upper side of the conductive film and selectively etches the insulating layer.;COPYRIGHT KIPO 2010