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SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF CAPABLE OF SECURING PROCESS MARGIN BETWEEN BOTTOM ELECTRODES
SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF CAPABLE OF SECURING PROCESS MARGIN BETWEEN BOTTOM ELECTRODES
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机译:能够处理底部电极之间的工艺裕度的半导体装置及其制造方法
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摘要
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a bridge fail by differently forming the height of a bowing profile between adjacent bottom electrodes.;CONSTITUTION: A first storage electrode contact plug(137) is formed on the upper side of a semiconductor substrate. The height of a second storage electrode contact plug(138) is different from the height of the first storage contact plug. A bottom electrode is formed on the upper sides of the first storage electrode contact plug and the second storage electrode contact plug. The first storage electrode contact plug and the second storage electrode contact plug respectively have polysilicon. The first storage electrode contact plug and the second storage electrode contact plug are alternatively arranged.;COPYRIGHT KIPO 2012
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