LDMOS DEVICE STRUCTURE AND METHOD FOR FABRICATING THE LDMOS DEVICE

摘要

PURPOSE: A lateral double diffused-MOS(LDMOS) device structure and a method for manufacturing a LDMOS device are provided to reduce on-resistance for improving the property of LDMOS device by increasing the concentration of a high voltage NWELL(HV-NWELL). CONSTITUTION: An N+ buried layer(NBL)(200) is formed in a semiconductor substrate. A P-epi layer(P-EPI)(204) is formed on the NBL. HV-NWELL is formed by ion-implanting in the P-EPI. A P-body includes the source electrode of LDMOS device in the HV-NWELL. A P-layer and the NWELL are successively on the lateral side of the P-body in the HV-NWELL.