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Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures
Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures
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机译:包括LDMOS晶体管结构的集成电路和用于制造LDMOS晶体管结构的方法
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摘要
Integrated circuits including LDMOS transistor structures and methods for fabricating LDMOS transistor structures are provided. An exemplary method for fabricating an LDMOS transistor structure includes providing a semiconductor-on-insulator (SOI) substrate including a semiconductor layer overlying an insulator layer overlying a bulk layer. The method includes forming a gate structure overlying the substrate. A channel region is formed in the semiconductor layer under the gate structure. The method includes forming a source region overlying the substrate. Further, the method includes forming a drain region overlying the substrate. A drift region is located between the drain region and the gate structure. Also, the method includes forming contacts to the gate structure, the source region, and the drain region.
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