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LDMOS transistor structures and integrated circuits including LDMOS transistor structures
LDMOS transistor structures and integrated circuits including LDMOS transistor structures
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机译:LDMOS晶体管结构和包括LDMOS晶体管结构的集成电路
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摘要
LDMOS transistor structures and integrated circuits including LDMOS transistor structures are provided. An exemplary integrated circuit including an LDMOS transistor structure includes a substrate including a first region and a second region. The substrate includes a bulk layer and, in the second region, an insulator layer overlying the bulk layer and a semiconductor layer overlying the insulator layer. The integrated circuit further includes a gate structure overlying the semiconductor layer. A channel region is formed in the semiconductor layer under the gate structure. The integrated circuit also includes a well contact region on the bulk layer in the first region, a source region overlying the substrate, and a drain region overlying the substrate. A drift region is located between the drain region and the gate structure.
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