Ldmos - devices and methods for forming a trench insulation region in an ldmos - device

摘要

Ldmos - device (100), comprising:• a first doped region (102) within a semiconductor substrate (104), the drain region is arranged as an;• a trench isolation region (106), wherein the trench isolation region (106) has a noise reduction means and wherein the trench isolation region (106) a first section and includes a second section, wherein the first portion between the semiconductor substrate (104) and the second section, and wherein at least the first section the noise reduction means; and• a second doped region (110) between the first doped region (102) and the trench isolation region (106), wherein the trench isolation region (106) and the second doped region (110) at least partially within the first doped region (102) are formed;• a space charge region (118) between the second doped region (110) and the first doped region (102) and the ldmos - current flow from the trench isolation region (106) separates.