PURPOSE: by removing semiconductor layer and convenient, the peripheral circuit region formation gate stack of the nonvolatile memory device of manufacturing method using engraving method. Length-width ratio can be lowered. ;CONSTITUTION: gate insulation layer (105) and semiconductor layer (110) are formed in the peripheral circuit region of semiconductor substrate (100). Gate material includes tunneling layer and the accumulation layer that charged, and is formed on the semiconductor layer. Gate material and driving and are formed on the described first pre- gate electrode (155a) and the second pre- gate electrode (155b) and first and second pre- gate electrode layer pattern in contact hole. ;The 2010 of copyright KIPO submissions
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