METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING PLASMA-DEHYDROGENATION, CAPABLE OF CONVERTING AN OXIDE FILM SPACER INCLUDING HYDROGEN TO A DEHYDRATED OXIDE FILM SPACER, AND THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device using plasma-dehydrogenation and the semiconductor device are provided to prevent the out-diffusion of dopant included in a substrate by forming dehydrated sidewall-spacers.;CONSTITUTION: A semiconductor substrate(100) includes an expanded region(101) and a source/drain region(102). The expanded region and the source/drain region include dopants. The concentration of the dopants in the source/drain is higher than that of the dopants in the expanded region. A gate insulating region(110) and a gate electrode(120) are formed on the semiconductor substrate. A first sidewall spacer(130) and a second sidewall spacer(140) are arranged on both sidewalls of the gate insulating region and the gate electrode.;COPYRIGHT KIPO 2010