Passivation of the silicon semiconductor devices and microwave frequency attachments with the double layer dielectric films from yttrium oxide and dysprosium oxide

摘要

The recombination properties of silicon passivated with double layer dielectric films of yttrium oxide and dysprosium oxide have been investigated. The values of effective lifetime and surface recombination velocity of the nonequilibrium charge carriers on the interface of the rare-earth elements/silicon-oxide have been defined.