首页>
外国专利>
SiH4 SOAK FOR LOW HYDROGEN SIN DEPOSITION TO IMPROVE FLASH MEMORY DEVICE PERFORMANCE
SiH4 SOAK FOR LOW HYDROGEN SIN DEPOSITION TO IMPROVE FLASH MEMORY DEVICE PERFORMANCE
展开▼
机译:SiH4浸泡用于低氢罪恶沉积,以改善闪存器件的性能
展开▼
页面导航
摘要
著录项
相似文献
摘要
Prior to deposition of a silicon nitride (SiN) layer on a structure, a non-plasma enhanced operation is undertaken wherein the structure is exposed to silane (SiH4) flow, reducing the overall exposure of the structure to hydrogen radicals. This results in the silicon nitride being strongly bonded to the structure and in improved performance.
展开▼