Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

摘要

Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is challenging to create intrinsic traps in the dielectric layer without high temperature processing steps. The main issue is to optimize the leakage current and intrinsic trap density simultaneously. Moreover, conventional memory devices need the support of tunneling and blocking layers since the charge trapping dielectric layer is incapable of preventing the memory leakage. Here we report a tunable flash memory device without tunneling and blocking layer by combining the discovery of high intrinsic charge traps of more than 10¹² cm⁻², together with low leakage current of less than 10⁻⁷ A cm⁻² in solution derived, inorganic, spin-coated dielectric films which were heated at 200 °C or below. In addition, the memory storage capacity is tuned systematically upto 96% by controlling the trap density with increasing heating temperature.