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Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systems
Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systems
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机译:包括浮栅的非易失性半导体器件,其制造方法及相关系统
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摘要
A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode, on at least one of the adjacent isolation layers, a dielectric layer over the first and second floating gate electrodes, and a control gate over the dielectric layer and the first and second floating gate electrodes.
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