Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO_(1.3)N insulators by digital sputtering method

摘要

Floating gated silicon-on-insulator nonvolatile memory devices with Au nanoparticles embedded in SiO_(1.3)N insulators were fabricated. The tunneling SiO_(1.3)N insulator, Au nanoparticles, and control SiO_(1.3)N insulator were sequentially deposited by digital sputtering method at 300℃. The size of Au nanoparticles was controlled in the range of 1-5 nm by adjusting the deposition thickness of Au layer and the density of Au nanoparticles was approximately 1.5 X 10~(12) cm~(-2). A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of Au particles and the memory window was larger than 2.5 V.