Nonvolatile memory devices including floating gates formed of silicon nano-crystals and methods of manufacturing the same

摘要

A memory device includes a gate stack on a substrate. The gate stack is disposed between a source and a drain. The gate stack includes a tunneling film, storage node, and control oxide film. A thickness of the control oxide film is greater than or equal to about 5 nm and less than or equal to about 30 nm. A method of manufacturing a memory device, including a gate stack on a substrate, wherein the gate stack is disposed between a source and a drain, includes: sequentially forming a tunneling film, a first silicon-rich oxide film, and a control oxide film on the substrate, wherein the first silicon-rich oxide film comprises a SiO_x film (1.5x1.7); converting the first silicon-rich oxide film into a silicon oxide (SiO₂) film comprising silicon nano-crystals; and patterning the control oxide film, the silicon oxide film, and the tunneling film to form the gate stack.