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Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same
Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same
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机译:包括凹陷的沟道区的金属氧化物半导体场效应晶体管(MOSFET)及其制造方法
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摘要
Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel region is provided between the source and drain regions. The channel region has a recessed region that is lower than bottom surfaces of the source and drain regions. Related methods of fabricating transistors are also provided.
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