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Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (000 1)

机译：栅极湿式再氧化对4H-siC（000 1）上制备的金属氧化物半导体场效应晶体管可靠性和沟道迁移率的影响

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Takuma Suzuki; Junji Senzaki; Tetsuo Hatakeyama;
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1. Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching [J] . Yongxun Liu, Etsuro Sugimata, Kenichi Ishii, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第4B期

机译：取向依赖性湿法刻蚀制备具有（111）沟道表面的多鳍片型双栅双金属氧化物半导体场效应晶体管的有效载流子实验研究
2. Low Threshold Voltage and High Mobility N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Using Hf-Si/HfO_2 Gate Stack Fabricated by Gate-Last Process [J] . Takashi Ando, Tomoyuki Hirano, Kaori Tai, Japanese journal of applied physics . 2010,第1issue1期

机译：采用前栅极工艺制造的Hf-Si / HfO_2栅堆叠的低阈值电压和高迁移率N沟道金属氧化物半导体场效应晶体管
3. High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown AI_2O_3 gate insulator [J] . S. Hino, T. Hatayama, J. Kato, Applied Physicsletters . 2008,第18期

机译：具有低温金属有机化学气相沉积生长的AI_2O_3栅绝缘体的高沟道迁移率4H-SiC金属氧化物半导体场效应晶体管
4. Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (0001) [C] . Takuma Suzuki, Junji Senzaki, Tetsuo Hatakeyama, Silicon Carbide and Related Materials 2007 . 2009

机译：栅极湿法再氧化对在4H-SiC上制造的金属氧化物半导体场效应晶体管的可靠性和沟道迁移率的影响（0001）
5. Advanced Germanium-Tin P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors [D] . Lei, Dian. 2018

机译：先进的锗 - 锡P沟道金属氧化物半导体场效应晶体管
6. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques [O] . Hsin-Ying Lee, Hung-Lin Huang, Chun-Yen Tseng 2014

机译：使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
7. A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (11(2)over-bar0) face [O] . Yano Hiroshi, Hirao Taichi, Kimoto Tsunenobu, 2001

机译：（11（2）over-bar0）面上4H-SiC金属氧化物半导体场效应晶体管的沟道迁移率大大提高的原因
8. N-Channel Deep-Depletion Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated in Zone-Melting-Recrystallized Polycrystalline Si Films on SiO2 [R] . Tsaur, B. Y., Fan, J. C. C., Mountain, R. W., 1981

机译：在siO2上区域熔化 - 再结晶多晶硅薄膜制备的N沟道深度耗尽金属氧化物半导体场效应晶体管

Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC (000 1)

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