application of hipims on silicon by high in a three-dimensional wafer packaging

• 1. 直接在三维结构基片上全表面共形覆盖石墨烯薄膜的方法 [P] . 中国专利： CN104018136B . 2016.08.24
• 2. 直接在三维结构基片上全表面共形覆盖石墨烯薄膜的方法 [P] . 中国专利： CN104018136A . 2014-09-03
• 3. Application of HIPIMS to through silicon via metallization in three-dimensional wafer packaging [P] . 美国专利： US8475634B2 . 2013-07-02

  机译： HIPIMS在三维晶圆封装中的贯通硅金属化中的应用

• 4. APPLICATION OF HIPIMS TO THROUGH SILICON VIA METALLIZATION IN THREE-DIMENSIONAL WAFER PACKAGING [P] . 欧洲知识产权局专利： EP2201148B1 . 2011-09-28

  机译： HIPIMS在三维晶圆封装中通过硅化处理硅的应用

• 5. APPLICATION OF HIPIMS TO THROUGH SILICON VIA METALLIZATION IN THREE-DIMENSIONAL WAFER PACKAGING [P] . 欧洲知识产权局专利： EP2201148A2 . 2010-06-30

  机译： HIPIMS在三维晶圆封装中通过硅化处理硅的应用

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• 9. Batch Fabrication of Through-Wafer Vias In CMOS Wafers for 3-D Packaging Applications [O] . Rasmussen Frank Engel, Heschel M., Hansen Ole 2003

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• 3. Surface Modification of Di-electric Material Using Photo Pretreatment for Fan-Out Wafer Level Package [J] . Jong-Young Park123 ,Young-Jae Kim23 ,Joo-Hyong Noh12 . 材料科学与工程：中英文B版 . 2018,第001期
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