首页> 外国专利> SILICON SINGLE CRYSTAL MANUFACTURING METHOD, SILICON SINGLE CRYSTAL, SILICON WAFER, APPARATUS FOR CONTROLLING MANUFACTURE OF SILICON SINGLE CRYSTAL, AND PROGRAM

SILICON SINGLE CRYSTAL MANUFACTURING METHOD, SILICON SINGLE CRYSTAL, SILICON WAFER, APPARATUS FOR CONTROLLING MANUFACTURE OF SILICON SINGLE CRYSTAL, AND PROGRAM

机译:硅单晶制造方法,硅单晶,硅晶片,用于控制硅单晶制造的装置和程序

摘要

According to a method of manufacturing a silicon monocrystal by FZ method, a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material (6). While impurities whose conductivity type is the same as that of the raw material (6) are supplied by a gas doping method, the raw material (6) is recrystallized by an induction-heating coil (3) for obtaining a product-monocrystal (8).
机译:根据通过FZ法制造单晶硅的方法,将通过CZ法提起的P型或N型硅晶体用作原料(6)。在通过气体掺杂法供给导电类型与原料(6)相同的杂质的同时,利用感应加热线圈(3)使原料(6)重结晶,从而得到产品单晶(8)。 )。

著录项

  • 公开/公告号EP2058420A4

    专利类型

  • 公开/公告日2010-12-22

    原文格式PDF

  • 申请/专利权人 SUMCO TECHXIV CORPORATION;

    申请/专利号EP20070828489

  • 发明设计人 SATO TOSHIYUKI;TOGAWA SHINJI;

    申请日2007-09-27

  • 分类号C30B29/06;C30B13/12;

  • 国家 EP

  • 入库时间 2022-08-21 17:57:55

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