Establishment of Manufacturing Methods for Growing Large B-Silicon Carbide Single Crystals.

摘要

A pilot-scale production capability has been established for the growth of large,high purity,two-dimensional beta-silicon carbide single crystals. In addition,polyhedral growth was initially obtained on beta-silicon carbide seed laths rotated in a 40at. % chromium-60at. % silicon solution at temperatures as low as 1660C. Temperature profiles were measured in molten silicon under crystal growth conditions,and the influence of thermal shielding modifications on thermal distribution in the liquid was studied. Based on carbon solubility data measured in chromium-silicon solutions,and with the aid of intricate furnace shielding,large polycrystalline silicon carbide (alpha and beta) boules were grown at 1850C. (Author)