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Silicon single crystal manufacturing method, silicon single crystal, silicon wafer, apparatus for controlling manufacture of silicon single crystal, and program

机译:硅单晶制造方法,硅单晶,硅晶片,用于控制硅单晶制造的设备和程序

摘要

A method of manufacturing a silicon monocrystal by FZ method, wherein a P-type or N-type silicon crystal having been pulled up by CZ method is used as a raw material. While impurities whose conductivity type is the same as that of the raw material are supplied by a gas doping method, the raw material is recrystallized by an induction-heating coil for obtaining a product-monocrystal.
机译:通过FZ法制造单晶硅的方法,其中将已经通过CZ法提起的P型或N型硅晶体用作原料。通过气体掺杂法供给导电性与原料相同的杂质,并通过感应加热线圈使原料重结晶,从而得到单晶产物。

著录项

  • 公开/公告号US8382895B2

    专利类型

  • 公开/公告日2013-02-26

    原文格式PDF

  • 申请/专利权人 SHINJI TOGAWA;TOSHIYUKI SATO;

    申请/专利号US20070307734

  • 发明设计人 TOSHIYUKI SATO;SHINJI TOGAWA;

    申请日2007-09-27

  • 分类号H01L21/322;C30B15/14;C30B11/00;C30B13/00;C30B21/04;C30B28/08;

  • 国家 US

  • 入库时间 2022-08-21 16:43:45

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