机译:准分子激光结晶在带氮化层的嵌入式沟道硅带上进行位置控制的单晶硅薄膜晶体管
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;
Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu, Taiwan;
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan;
Silicon; Strips; Films; Thin film transistors; Grain boundaries; Lasers; Crystallization;
机译:具有垂直于沟道的位置受控晶界的激光结晶多晶硅氧化硅氮化物氧化硅薄膜晶体管的存储特性
机译:具有垂直于沟道的位置受控晶界的激光结晶多晶硅氧化硅氮化物氧化硅薄膜晶体管的存储特性
机译:通过准分子激光结晶具有位置受控的晶界的高性能多晶硅纳米线薄膜晶体管
机译:通过准分子激光结晶制造多晶硅薄膜晶体管的温度分析
机译:通过准分子激光辐照用于薄膜晶体管的晶体硅薄膜。
机译:准分子激光晶体化的Si1-xGex薄膜晶体管的电学和结构特性
机译:高性能短通道双栅极低温多晶硅薄膜晶体管使用准分子激光结晶
机译:硅薄膜准分子激光晶化:用于薄膜晶体管应用的晶界限位和单晶岛材料的人工控制超横向生长