Efficiency enhancement of single crystal silicon solar cell with POCL3 and wafer optimally controlled by PECVD method

摘要

A method proposed to effectively hoist the power conversion efficiency (PCE) in single crystalline solar cells (SCS) is feasible. In the approach, the optimization of etched depth to reduce reflection of sunlight and the maximization of surface area of wafer to increase current absorption were performed by plasma enhanced chemical vapor deposition (PECVD). Results obtained by a standard testing equipment under AM 1.5G illumination has proved this method to be effective in increasing the open-circuit voltage and the short-circuit current of SCS with the PCE being 19 % or above.