METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING DUAL SIDEWALL OXIDATION CAPABLE OF PREVENTING THE EXCESSIVE SHRINKAGE OF A PAD NITRIDE LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device using dual sidewall oxidation is provided to prevent silicon from being lost on a trench sidewall by using a low pressure chemical vapor deposition method and a slot plane antenna oxidation process using plasma. ;CONSTITUTION: A trench(24A) is formed by etching a semiconductor substrate(21) using a pad nitride layer(23A) as an etch barrier. A first sidewall oxide layer(25) is formed by oxidizing the trench and the pad nitride layer through oxidation process using plasma. A first sidewall oxide layer is formed by a slot plane antenna oxidation process. A second sidewall oxide layer(26) is formed on the first sidewall oxide layer. The second sidewall oxide layer is formed by using a low pressure chemical vapor deposition method.;COPYRIGHT KIPO 2011