首页> 外国专利> METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH SIDEWALL JUNCTION CAPABLE OF PREVENTING A FLOATING BODY DUE TO THE EXCESSIVE DIFFUSION OF SIDEWALL JUNCTION

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH SIDEWALL JUNCTION CAPABLE OF PREVENTING A FLOATING BODY DUE TO THE EXCESSIVE DIFFUSION OF SIDEWALL JUNCTION

机译:制造具有能够防止由于侧壁接合的过度扩散而引起的浮动体的侧壁接合的半导体装置的方法

摘要

PURPOSE: A method for manufacturing a semiconductor device with sidewall junction is provided to reduce development costs by simplifying manufacturing processes by forming sidewall contact and sidewall junction during etching a trench which is processed two times.;CONSTITUTION: A substrate(21B) is etched and a plurality of bodies, which is separated with a first trench(24), is formed. Junction is formed in the substrate on the bottom side of the first trench. A part of the junction is etched and sidewall junction(29A), whose side is exposed by a second trench, is formed. A metal bit line(33), which fills the second trench while being connected to the sidewall junction, is formed.;COPYRIGHT KIPO 2012
机译:目的:提供一种具有侧壁结的半导体器件的制造方法,以通过在蚀刻两次的沟槽期间形成侧壁接触和侧壁结来简化制造工艺,从而降低开发成本。组成:蚀刻衬底(21B),形成多个被第一沟槽(24)隔开的主体。在第一沟槽的底侧上的衬底中形成结。蚀刻结的一部分,并形成侧面被第二沟槽暴露的侧壁结(29A)。形成金属位线(33),该金属位线(33)在连接到侧壁结的同时填充了第二沟槽。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR101062862B1

    专利类型

  • 公开/公告日2011-09-07

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20100065443

  • 发明设计人 JI YUN HYUCK;

    申请日2010-07-07

  • 分类号H01L21/8242;H01L27/108;

  • 国家 KR

  • 入库时间 2022-08-21 17:49:49

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