首页> 外国专利> SEMICONDUCTOR DEVICE WITH SIDEWALL JUNCTION CAPABLE OF PREVENTING A FLOATING BODY BY FORMING A DIFFUSION BARRIER AREA AND A MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH SIDEWALL JUNCTION CAPABLE OF PREVENTING A FLOATING BODY BY FORMING A DIFFUSION BARRIER AREA AND A MANUFACTURING METHOD THEREOF

机译:具有能够通过形成扩散壁垒区域来防止浮体的侧壁接合的半导体装置及其制造方法

摘要

PURPOSE: A semiconductor device with sidewall junction and a manufacturing method thereof are provided to prevent a floating body by controlling the excessive diffusion of following sidewall junction by forming a diffusion barrier area on an area in which sidewall junction is formed.;CONSTITUTION: A plurality of bodies(201) is separated by a trench and includes a diffusion barrier area(23A) in which both sidewalls are exposed. A doped film, which gap-fills the trench, is formed. The doped film is annealed and sidewall junction(38) is formed in the diffusion barrier area. A conductive line, which is connected to the sidewall junction and partially fills the trench, is formed.;COPYRIGHT KIPO 2012
机译:目的:提供一种具有侧壁结的半导体器件及其制造方法,以通过在形成侧壁结的区域上形成扩散阻挡区来控制随后的侧壁结的过度扩散来防止浮体。主体(201)的一部分被沟槽隔开,并且包括其中两个侧壁都暴露的扩散阻挡区域(23A)。形成间隙填充沟槽的掺杂膜。将掺杂的薄膜退火,并在扩散阻挡区中形成侧壁结(38)。形成一条连接到侧壁结并部分填充沟槽的导线。; COPYRIGHT KIPO 2012

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