METHOD FOR MANUFACTURING A SIDEWALL CONTACT OF A SEMICONDUCTOR DEVICE USING A SELF-ALIGNED DAMASCENE PROCESS CAPABLE OF FORMING A JUNCTION REGION WITH UNIFORM DEPTH AND DOSE IN A SIDEWALL

摘要

PURPOSE: A method for manufacturing a sidewall contact of a semiconductor device using a self-aligned damascene process is provided to uniformly form the position and depth of a sidewall contact by forming a recess with uniform depth. ;CONSTITUTION: A plurality of active regions(201) including a first sidewall(S1) and a second sidewall(S2) are formed by etching a semiconductor substrate(21A). An insulation layer(26) is formed on the first sidewall and the second sidewall. An etch stop layer(28A) partially fills a space between the active regions. A recess is formed to expose the insulation layer formed on the first sidewall or second sidewall. The sidewall contact is formed to expose a part of the sidewall by selectively removing the insulation layer.;COPYRIGHT KIPO 2011