SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING THE SAME CAPABLE OF REDUCING PARASITIC CAPACITANCE

摘要

PURPOSE: A semiconductor device and a method for forming the same are provided to constantly secure the height of a buried type gate in a cell region to be the same as the height of a gate in a peripheral region by forming a stepped part between the cell region and the peripheral region.;CONSTITUTION: Element isolation films(120, 220) defining active regions(110, 210) are formed on a semiconductor substrate. A hard mask layer is formed on the surface of the semiconductor substrate. A hard mask pattern(132) is formed by etching the peripheral circuit region part of the hard mask layer. The semiconductor substrate on the peripheral circuit region part is etched using the hard mask pattern as a mask in order to form a stepped part between a cell region and a peripheral region.;COPYRIGHT KIPO 2011