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机译:寄生电容对相变随机存取存储器件编程性能的影响
Data Storage Institute, Agency for Science, Technology and Research (A~*STAR), DSI Building,5 Engineering Drive I, Singapore 117608, Singapore Department of Electrical and Computer Engineering, Everitt Laboratory, University of Illinois at Urbana-Champaign, MC-702 1406 W. Green St., Urbana, Illinois 61801-2918, USA;
Data Storage Institute, Agency for Science, Technology and Research (A~*STAR), DSI Building,5 Engineering Drive I, Singapore 117608, Singapore;
Data Storage Institute, Agency for Science, Technology and Research (A~*STAR), DSI Building,5 Engineering Drive I, Singapore 117608, Singapore;
Data Storage Institute, Agency for Science, Technology and Research (A~*STAR), DSI Building,5 Engineering Drive I, Singapore 117608, Singapore;
Data Storage Institute, Agency for Science, Technology and Research (A~*STAR), DSI Building,5 Engineering Drive I, Singapore 117608, Singapore Department of Electrical and Computer Engineering, National University of Singapore,Singapore 117576, Singapore;
Department of Electrical and Computer Engineering, Everitt Laboratory, University of Illinois at Urbana-Champaign, MC-702 1406 W. Green St., Urbana, Illinois 61801-2918, USA;
机译:相变随机存取存储器中掺Sn的Ge_2Sb_2Te_5的相变特性及器件性能
机译:集编程方法和相变随机存取存储器阵列的性能改进
机译:原位 i> TEM访问的基于Ge–Sb–Te的相变随机存取存储设备的微结构相关的DC集开关行为
机译:通过阶梯状脉冲编程通过阶梯式脉冲编程随机访问多级存储
机译:具有相变随机存取存储器的氮掺杂锗锑碲化物的超晶格状结构。
机译:电极材料对用于相变随机存取存储器的原子层沉积生长的GeTe结晶的影响
机译:基于GE-SB-TE的相变随机存取存储器设备的微结构相关的DC SET切换行为