Phase Transition Characteristics and Device Performance of Sn-doped Ge_2Sb_2Te_5 in Phase Change Random Access Memory

摘要

Sn was employed in Ge_2Sb_2Te_5 to accelerate operation speed of phase change random access memory (PRAM). Crystallized Sn-doped Ge_2Sb_2Te_5 showed face centered cubic (fcc) or hexagonal close packed (hcp) structures upon heat treatment, which was similar to that of Ge_2Sb_2Te_5. However, Sn doping increased the phase transformation temperature to hcp of Ge_2Sb_2Te_5. 17 at. % Sn-doped Ge_2Sb_2Te_5 had an accelerated crystallization under laser irradiation and moreover, showed decreased operation time of PRAM compared to that of Ge_2Sb_2Te_5. In addition, 17 at. % Sn-doped Ge_2Sb_2Te_5 showed stable and reversible device performance.