LED DEVICE EQUIPPED WITH A NITRIDE SEMICONDUCTOR LED CHIP AND THE WAVELENGTH CONVERSION MATERIAL WHICH IS EXCITED BY THE EMISSION LIGHT OF THE NITRIDE SEMICONDUCTOR LED CHIP AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An LED device and a manufacturing method thereof are provided to easily execute the fluorescent material layer spreading process without an etching process for forming a separate trench and to reduce the cost of the fluorescent material layer spreading process.;CONSTITUTION: A stripe pattern is formed on a substrate(101). The section which is cut the substrate in the longitudinal direction of the stripe pattern is a nano-rod shape. One or more nitride semiconductor light emitting structures comprises the first electrical conduction semiconductor layer which accomplishes a core part in the section of the nano-rod shape and the second electrical conduction semiconductor layer which accomplishes a shell part by successively covering the first electrical conduction semiconductor layer. A first wavelength converter(160) is formed in the side of the light emitting structure and changes the emission light of a light emitting structure(110) into a first wave length. A second wavelength converter(170) is formed in the upper side of the light emitting structure and changes the emission light of the light emitting structure into a second wave length.;COPYRIGHT KIPO 2012