Inductively Coupled Plasma Etching of III-Nitrides in Cl(2)/Xe,Cl(2)/Ar and Cl(2)/He;Materials Research Society Internet Journal of Nitride Semiconductor Research

摘要

The role of additive noble gases He, Ar and Xe to C&based Inductively Coupled Plasmas for etching of GaN, AIN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with C12/Xe, while the highest rates for AIN and GaN were obtained with C12/He. Efficient breaking of the 111-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AIN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of -80 for InN to GaN and InN to AIN were obtained.