Antenna, inductively coupled plasma source, the plasma generating method using the antenna, a plasma etching apparatus and a semiconductor wafer processing apparatus

摘要

So as to be etched and coated semiconductor wafers, inductively coupled plasma source according to the invention is equipped with peripheral ionization source for generating a high density plasma vacuum chamber (32) in (39). It is provided with a segmented structure formed by a low radiation segments and high radiation segments, in around the perimeter of the chamber, the plasma, ICP source imparts energy distribution that forms a ring-shaped array. Low inductance antenna which is segmented from (40), via (25a) window array dielectric window (25) or, further, through the (50) or baffle shield is segmented, energy is coupled . And an antenna (40), the conductor segments of the plurality of conductor segments that are arranged in densification (45), is arranged so as to Uto-ka being positioned in alternating manner, and (46).