Studies of inductively coupled plasma source antenna symmetry andcharacterisation of an SiO₂ sputtering plasma

摘要

Summary form only given. Simulations of inductively coupledplasmas (ICPs) typically simplify the driving antenna by analyzing it ascomposed of symmetric rings. To investigate the effects of thisapproximation and to explore the performance of an ICP source withimproved symmetry, an axisymmetric antenna design has been established.These antennae can be easily constructed with varied geometries and RFpower intensity patterns. The characteristics of an ICP source driven bya standard “stove element” antenna are compared with thoseof an ICP source driven by the symmetric antenna configuration. Sourceoptimization is then studied by using varying geometries of thesymmetric antenna configuration. Initial results and comparisons withpublished simulations are presented. We also report initial results of astudy of plasma damage mechanisms in the formation of sputtered MOScapacitors. MOS capacitors can be produced by depositing SiO₂onto an Si substrate using a source such as a Kurt Lesker magnetronsputter source and then evaporating a metal film pattern over the SiO₂. The performance of these MOS capacitors depends both onthe quality of the sputter deposition and any plasma inflictedcollateral damage. The MOS capacitor performance can be analyzed using agraphical technique that identifies and classifies surface defect levelsfrom the capacitor's C-V characteristics