nitride semiconductor light-emitting chips, the method of manufacturing the nitride semiconductor light emitting device and a nitride semiconductor chip

摘要

nitride semiconductor light-emitting chip (100), the conductive having a nitride semiconductor layer a substrate (104), n-type nitride semiconductor layer which are sequentially formed on a main surface of the nitride semiconductor layer (105), an active layer (106) and the p-type nitride semiconductor layer (107), the conductive substrate and an n-side electrode provided in contact (109) and. The conductive substrate has a main surface on the opposite side of the rear surface of the mutually separated plurality of recesses formed in positions (104a). The n-side electrode is in contact with at least a portion of a surface of the recess (104a). Conducting the thickness of the substrate to a T, when the depth of the recess and D1, depth D1 is more than 25% of the thickness T.