NITRIDE SEMICONDUCTOR LIGHT-EMITTING CHIP, NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CHIP

摘要

A nitride semiconductor light-emitting chip (100) is provided with: a conductive substrate (104) having a nitride semiconductor layer; an n-type nitride semiconductor layer (105), an active layer (106), and a p-type nitride semiconductor layer (107) formed sequentially on the primary surface of the nitride semiconductor layer; and an n-side electrode (109) provided so as to contact the conductive substrate. The conductive substrate has a plurality of recessed portions (104a) formed in mutually separated positions on a rear side that is on the opposite side of the primary side. The n-side electrode contacts at least some of the front side of the recessed portions (104a). D1≤0.25T, where T is the thickness of the conductive substrate and D1 is the depth of the recessed portions.